PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
SCH2201 |
NPN NPN NPN Epitaxial Planar Silicon Transistor Switching, Driver Applications
|
Sanyo Semicon Device
|
2SD1572 |
Silicon NPN Triple Diffused(涓???╂?NPN?朵?绠? 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Hitachi,Ltd.
|
2SD946 2SD946A 2SD946AQ 2SD946AR 2SD950 2SD951 2SD |
Si NPN triple diffused junction mesa . Line-operated horizontal deflection output. SI NPN EPITAXIAL PLANAR DARLINGTON 1 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-126
|
PANASONIC[Panasonic Semiconductor] Panasonic, Corp.
|
2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier. Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
MSD1328-ST1 MSD1328-ST1G MSD1328-RT1G MSD1328-RT10 |
NPN Low Voltage Output Amplifiers General Purpose NPN Transistor Small Signal Plastic NPN; Package: SC-59 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
PEMH15115 |
NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm; Package: SOT666 (SS-Mini); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T |
Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363
|
NEC[NEC] NEC Corp.
|
PEMH9 PIMH9 PUMH9 PUMH9125 |
NPN-NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=10千欧姆,R2=47千欧 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ NPN/NPN resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=2.2千欧姆,R2=47千欧
|
NXP Semiconductors N.V.
|
CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC] NEC, Corp. NEC Corp.
|